Microcircuit Memory Part 333505-000 With NSN 5962-01-358-2693 by Bae Systems Information And Electronic Systems Integration I - Submit a Quote

Mfg Part Number: 333505-000	Alternate P/N: 333505000	Manufacturer: Bae Systems Information And Electronic Systems Integration I
NSN : 5962-01-358-2693	Item Name : Microcircuit Memory	CAGE Code : 81413
FSC : 5962 Microcircuits Electronic

On Stacked Aviation, we can help customers procure all the NSN components that they need with ease, including those such as NSN 5962-01-358-2693 by Bae Systems Information And Electronic Systems Integration I. This Microcircuit Memory part is listed alongside the part number 333505-000, and it is currently available for purchase from our website at any time. If you would like a quote on this item for your comparisons, we ask you to fill out and submit the RFQ form as provided below. As you complete our form, please provide us with as much detail as you can regarding your particular needs so that we may best personalize a solution that accommodates your individual requirements.

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NSN Information for Part Number 333505-000 with NSN 5962-01-358-2693, 5962013582693

NSN	FSC	NIIN	CLS	Hazmat	DEMIL	Cancelled NSN
5962-01-358-2693 Item Description: Microcircuit Memory	5962	013582693	0	N	B
	CIIC	HCC	ESD	PMIC	Criticality	ENAC
	U		B	A	0
Part Number	ISC	RNVC	RNCC	HCC	MSDS	SADC
333505-000	5	2	3

Characteristics Data of NSN 5962-01-358-2693, 5962013582693

MRC	Criteria	Characteristic
MEMORY	AEHX	MAXIMUM POWER DISSIPATION RATING303 0 MILLIWATTS
MEMORY	CTQX	CURRENT RATING PER CHARACTERISTIC55 00 MILLIAMPERES REVERSE CURRENT DC ABSOLUTE
MEMORY	CZEN	VOLTAGE RATING AND TYPE PER CHARACTERISTIC-0 5 VOLTS MINIMUM POWER SOURCE AND 7 0 VOLTS MAXIMUM POWER SOURCE
MEMORY	FEAT	SPECIAL FEATURESMOUNTED ON PIN GRID ARRAY UNIT
MEMORY	TTQY	TERMINAL TYPE AND QUANTITY20 LEADLESS
MEMORY	ADAQ	BODY LENGTH0 342 INCHES MINIMUM AND 0 358 INCHES MAXIMUM
MEMORY	ADAU	BODY HEIGHT0 060 INCHES MINIMUM AND 0 100 INCHES MAXIMUM
MEMORY	AFGA	OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS
MEMORY	AFJQ	STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS
MEMORY	CBBL	FEATURES PROVIDEDBIPOLAR AND PROGRAMMED AND BIDIRECTIONAL AND HIGH IMPEDANCE AND WCLOCK
MEMORY	CQSJ	INCLOSURE MATERIALCERAMIC
MEMORY	CQSZ	INCLOSURE CONFIGURATIONLEADLESS FLAT PACK
MEMORY	CQWX	OUTPUT LOGIC FORMTRANSISTOR-TRANSISTOR LOGIC
MEMORY	CTFT	CASE OUTLINE SOURCE AND DESIGNATORC-2 MIL-M-38510
MEMORY	CWSG	TERMINAL SURFACE TREATMENTSOLDER
MEMORY	CZEQ	TIME RATING PER CHACTERISTIC50 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME HIGH TO LOW LEVEL OUTPUT AND 50 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT
MEMORY	CZER	MEMORY DEVICE TYPEPAL
MEMORY	TEST	TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC
MEMORY	ADAT	BODY WIDTH0 342 INCHES MINIMUM AND 0 358 INCHES MAXIMUM
MEMORY	CQZP	INPUT CIRCUIT PATTERN16 INPUT
MEMORY	CXCY	PART NAME ASSIGNED BY CONTROLLING AGENCYCOMBINATORIAL AND-OR-INVERT GATE ARRAY